NXP · PLD-1.5
We do not sell online. Submit an inquiry and our sales team will reply with pricing and lead time.
MW6S004NT1 RF LDMOS Power Transistor PLD-1.5
| Model | MW6S004NT1 |
| Brand | NXP |
| Category | Discrete Semiconductors |
| Package | PLD-1.5 |
| Standard Package | Tape & Reel |
| Supply Voltage | 28 V |
| Core | LDMOS |
| Operating Temperature | -40°C ~ 150°C |
N-channel LDMOS RF power transistor, 28V supply, 4W output power, frequency range 1~2000MHz, PLD-1.5 package. Features high gain, excellent EMC performance, designed for RF power amplifier in wireless communication systems, supplied in tape & reel packaging.
Related Components
TPD1E05U06QDPYRQ1
Brand: Texas Instruments
X1SON-2
Automotive grade single channel TVS diode, 5.5V standoff voltage, ultra low 0.4pF capacitance, AEC-Q100 qualified, for …
USD 0.13
SI2319CDS-T1-GE3
Brand: Vishay
SOT-23
P-channel trench power MOSFET, 40V Vds, 4.4A continuous drain current, low Rds(on), halogen free, widely used for load …
USD 0.46
SZMMBZ27VCLT1G
Brand: onsemi
SOT-23-3
Automotive grade dual common cathode TVS diode, 40W peak power, 22V standoff voltage, AEC-Q101 qualified for ESD transi…
USD 0.03