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W25Q32JVSSIQ
| Interface Type | SPI |
| Memory Capacity | 32Mbit |
| Clock Frequency (fc) | 133MHz |
| Operating Voltage | 2.7V ~ 3.6V |
| Standby Current | 1uA |
| Erase/Write Cycles | 100000 times |
| Page Program Time (Tpp) | 3ms |
| Block Erase Time (tBE) | - |
| Data Retention - TDR (Years) | 20 years |
| Operating Temperature | -40℃ ~ +85℃ |
| Features | Hardware Write Protection; Absolute Write Protection; Write Enable Latch; Software Write Protection; Power-on Reset |
Serial flash memory provides a storage solution for systems with limited space, pins, and power. This series offers flexibility and performance far beyond ordinary serial flash devices. It's suitable for mapping code to RAM, executing code directly via dual/quad SPI (XIP), and storing voice, text, and data. The device operates on a 2.7V to 3.6V power supply, with a standby current as low as 1μA. The array consists of 16,384 programmable pages, with 256 bytes per page, and up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 pages (4KB sector erase), 128 pages (32KB block erase), 256 pages (64KB block erase), or the entire chip (chip erase). There are 1,024 erasable sectors and 64 erasable blocks, and the small 4KB sectors are a big plus.
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