DIODES · SOT-223
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FZT651TA
| Transistor Type | NPN |
| Collector Current(Ic) | 3A |
| Collector-Emitter Breakdown Voltage(Vceo) | 60V |
| Power Dissipation(Pd) | 3W |
| DC Current Gain(hFE) | 80 |
| Transition Frequency(fT) | 175MHz |
| Collector-Emitter Saturation Voltage(VCE(sat)) | 600mV |
| Operating Temperature | -55°C~+150°C |
| Emitter-Base Breakdown Voltage(Vebo) | 7V |
| Quantity | 1 NPN |
| Configuration | Discrete |
Features: BVCEO > 60V. IC = 3A high continuous current. ICM = 6A peak pulse current. Low saturation voltage VCE(sat) < 300mV @ 1A. Complementary PNP type. Lead-free surface finish; RoHS compliant. Halogen and antimony free. 'Green' device.
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